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FQP34N20 Power MOSFET, N Channel, 200 V, 31 A, 0.06 ohm, TO-220, Through Hole
ΚατασκευαστήςONSEMI
Διαθεσιμότητα : Σε stock 4 Προϊόν(ντα) Άμεσα Διαθέσιμο
Κωδικός προϊόντος :FR-1839004
Βάρος και διαστάσεις προϊόντος
Βάρος προϊόντος: 0.0050KG
3,50 €
Χωρίς ΦΠΑ : 2,82 €
Περιγραφή
ONSEMI FQP34N20 Power MOSFET, N Channel, 200 V, 31 A,
0.06 ohm, TO-220, Through Hole
The FQP34N20 is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 60nC typical low gate charge
- 55pF typical low Crss
| Channel Type: | N Channel |
| Transistor Polarity: | N Channel |
| Continuous Drain Current Id: | 31A |
| Drain Source Voltage Vds: | |
| Drain Source On State Resistance: | 0.06ohm |
| On Resistance Rds(on): | 0.06ohm |
| Rds(on) Test Voltage: | 10V |
| Transistor Mounting: | Through Hole |
| Gate Source Threshold Voltage Max: | 5V |
| Power Dissipation Pd: | 180W |
| Transistor Case Style: | TO-220 |
| Power Dissipation: | 180W |
| No. of Pins: | 3 |
| Operating Temperature Max: | 150°C |
DataSheet :
