IGBT FGA25N120AN TO-3P Power Transistor

The FGA25N120AN is a high voltage, 1200V fast IGBT power transistor designed to handle substantial power loads with efficiency and reliability. Utilizing the latest IGBT technology, this device is optimized for performance in demanding applications, ensuring minimal energy loss and enhanced thermal stability. The FGA25N120AN is housed in a TO-3P package, which is known for its excellent heat dissipation properties, thereby making it suitable for high-power applications. 

Key Features : 
• High Voltage Rating: With a maximum drain-to-source voltage rating of 1200V, the FGA25N120AN is suitable for numerous high-voltage applications.

• Fast Switching Speed: This IGBT provides fast switching characteristics, which reduce switching losses and enhance overall circuit efficiency.

• NPT Trench Technology: Utilizes Non-Punch Through (NPT) trench technology, resulting in low on-state voltage and reduced switching losses.

• Low Gate Drive Voltage: Features a low gate threshold voltage of typically 2V, facilitating the design of low-voltage driver circuits. 

Technical Specifications :
• Drain-to-Source Voltage (VDSS): 1200V

• Drain Current (ID): 25A

• Gate-to-Source Voltage (VGS): ±20V

• On-Resistance (RDS(on)): Typically 0.40

• Switching Time: Refer to datasheet for detailed switching times (turn-on, turn-off)